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High-performance piezoelectric materials are critical components for electromechanical sensors and actuators. For more than 60 years, the main strategy for obtaining large piezoelectric response has been to construct multiphase boundaries, where nanoscale domains with local structural and polar heterogeneity are formed, by tuning complex chemical compositions. We used a different strategy to emulate such local heterogeneity by forming nanopillar regions in perovskite oxide thin films. We obtained a giant effective piezoelectric coefficient d 33 , f * of ~1098 picometers per volt with a high Curie temperature of ~450°C. Our lead-free composition of sodium-deficient sodium niobate contains only three elements (Na, Nb, and O). The formation of local heterogeneity with nanopillars in the perovskite structure could be the basis for a general approach to designing and optimizing various functional materials. 

The correction of aberrations in the scanning transmission electron microscope (STEM) has simultaneously improved both spatial and temporal resolution, making it possible to capture the dynamics of single atoms inside materials, and resulting in new insights into the dynamic behavior of materials. In this article, we describe the different beam–matter interactions that lead to atomic excitations by transferring energy and momentum. We review recent examples of sequential STEM imaging to demonstrate the dynamic behavior of single atoms both within materials, at dislocations, at grain and interface boundaries, and on surfaces. We also discuss the effects of such dynamic behavior on material properties. We end with a summary of ongoing instrumental and algorithm developments that we anticipate will improve the temporal resolution significantly, allowing unprecedented insights into the dynamic behavior of materials at the atomic scale. 

The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall effect also leads to spin accumulation at the surfaces perpendicular to both the current and magnetization direction. Here, we experimentally demonstrate that the spin accumulation, subsequent spin backflow, and spin–charge conversion can give rise to a different type of spin current-related spin current related magnetoresistance, dubbed here as the anomalous Hall magnetoresistance, which has the same angular dependence as the recently discovered spin Hall magnetoresistance. The anomalous Hall magnetoresistance is observed in four types of samples: co-sputtered (Fe_1−xMn_x)_0.6Pt_0.4, Fe_1−xMn_x/Pt multilayer, Fe_1−xMn_xwithx = 0.17–0.65 and Fe, and analyzed using the drift-diffusion model. Our results provide an alternative route to study charge–spin conversion in ferromagnets and to exploit it for potential spintronic applications.

 

Carrier doping is the basis of the modern semiconductor industry. Great efforts are put into the control of carrier doping for 2D semiconductors, especially the layered transition metal dichalcogenides. Here, the direct laser patterning of WSe₂devices via light‐induced hole doping is systematically studied. By changing the laser power, scan speed, and the number of irradiation times, different levels of hole doping can be achieved in the pristine electron‐transport‐dominated WSe₂, without obvious sample thinning. Scanning transmission electron microscopy characterization reveals that the oxidation of the laser‐radiated WSe₂is the origin of the carrier doping. Photocurrent mapping shows that after the same amount of laser irradiation, with increasing thickness, the laser patterned PN junction changes from the pure lateral to the vertical‐lateral hybrid structure, accompanied by the decrease in the open circuit voltage. The vertical‐lateral hybrid PN junction can be tuned to a pure lateral one by further irradiation, showing possibilities to construct complex junction profiles. Moreover, a NOR gate circuit is demonstrated by direct patterning of p‐doped channels using laser irradiation without introducing passive layers and metal electrodes with different work functions. This method simplifies device fabrication procedures and shows a promising future in large scale logic circuit applications.

 

The Ag and In co‐doped PbTe, Ag_nPb₁₀₀In_nTe_100+2n(LIST), exhibitsn‐type behavior and features unique inherent electronic levels that induce self‐tuning carrier density. Results show that In is amphoteric in the LIST, forming both In³⁺and In¹⁺centers. Through unique interplay of valence fluctuations in the In centers and conduction band filling, the electron carrier density can be increased from ≈3.1 × 10¹⁸cm⁻³at 323 K to ≈2.4 × 10¹⁹cm⁻³at 820 K, leading to large power factors peaking at ≈16.0 µWcm⁻¹K⁻²at 873 K. The lone pair of electrons from In⁺can be thermally continuously promoted into the conduction band forming In³⁺, consistent with the amphoteric character of In. Moreover, with rising temperature, the Fermi level shifts into the conduction band, which enlarges the optical band gap based on the Moss–Burstein effect, and reduces bipolar diffusion and thermal conductivity. Adding extra Ag in LIST improves the electrical transport properties and meanwhile lowers the lattice thermal conductivity to ≈0.40 Wm⁻¹K⁻¹. The addition of Ag creates spindle‐shaped Ag₂Te nanoprecipitates and atomic‐scale interstitials that scatter a broader set of phonons. As a result, a maximumZTvalue ≈1.5 at 873 K is achieved in Ag₆Pb₁₀₀InTe₁₀₂(LIST).